Dielectric properties of single-crystalTiSi2from 0.6 to 20 eV

The electronic structure of ${\mathrm{TiSi}}_2$ has been examined by measuring polarized reflectivity spectra of single crystals in the photon-energy range from 0.6 to 20 eV. The complex dielectric functions and the optical conductivities are determined by Kramers-Kronig analysis. The spectral structures are discussed in terms of interband transitions among Ti 3d states and Si 3s-3p states with the aid of published results of band-structure calculations. The effective number of electrons contributing to optical transitions and the electron-energy-loss functions are also calculated and discussed.