Surface-energy-driven secondary grain growth in thin Sb films
- 10 June 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (23) , 2631-2633
- https://doi.org/10.1063/1.104816
Abstract
Deposition rates and film thicknesses have been observed to be a key parameter for the grain growth and surface-energy-driven secondary grain growth of the as-deposited thin Sb films prepared by thermal evaporation. At a low deposition rate and thinner-film thickness (∼260 Å), (003) grains which have the lowest surface energy are observed to account for approximately 90% of the microstructure. Whereas at high deposition rate and greater film thickness (∼1300 Å), an almost random grain orientation was observed from x-ray diffraction data. After thermal annealing at 450 °C, secondary grains grew to show preferred orientation in all the films. Also, film thickness has been found to be an important factor on the succeeding microstructure after thermal annealing.Keywords
This publication has 8 references indexed in Scilit:
- Grain growth and grain size distributions in thin germanium filmsJournal of Applied Physics, 1987
- Surface-energy-driven secondary grain growth in thin Au filmsApplied Physics Letters, 1986
- Computer simulation of grain growth—V. Abnormal grain growthActa Metallurgica, 1985
- Secondary grain growth in thin films of semiconductors: Theoretical aspectsJournal of Applied Physics, 1985
- Graphoepitaxy of Ge on SiO2 by solid-state surface-energy-driven grain growthApplied Physics Letters, 1984
- Surface-energy-driven secondary grain growth in ultrathin (<100 nm) films of siliconApplied Physics Letters, 1984
- Anomalous large grains in alloyed aluminum thin films I. Secondary grain growth in aluminum-copper filmsThin Solid Films, 1972
- Bonds broken at atomically flat crystal surfaces—IJournal of Physics and Chemistry of Solids, 1962