Graphoepitaxy of Ge on SiO2 by solid-state surface-energy-driven grain growth
- 15 September 1984
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (6) , 631-633
- https://doi.org/10.1063/1.95336
Abstract
Solid‐state surface‐energy‐driven grain growth in 30‐nm‐thick Ge films on SiO2, encapsulated with SiO2, produces a predominance of (110) crystallographic texture in secondary grains several micrometers in diameter. If the SiO2 substrate is patterned with a 0.2‐μm period relief grating, ∼10 nm deep, with approximately square‐wave profile, many of the secondary grains that form have (100) texture. These grains show a graphoepitaxial orientation with 〈100〉 directions preferentially parallel to the grating axis.Keywords
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