Effect of surface passivation on performance of AlGaN/GaN/Si HEMTs
- 1 November 2003
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 47 (11) , 2097-2103
- https://doi.org/10.1016/s0038-1101(03)00238-7
Abstract
No abstract availableKeywords
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