Comparison of Surface Passivation Films for Reduction of Current Collapse in AlGaN/GaN High Electron Mobility Transistors
- 1 January 2002
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 149 (11) , G613-G619
- https://doi.org/10.1149/1.1512675
Abstract
Three different passivation layers (SiNX,(SiNX, MgO, and Sc2O3)Sc2O3) were examined for their effectiveness in mitigating surface-state-induced current collapse in AlGaN/GaN high electron mobility transistors (HEMTs). The plasma-enhanced chemical vapor deposited SiNXSiNX produced ∼70-75% recovery of the drain-source current, independent of whether SIH4/NH3SIH4/NH3 or SiD4/ND3SiD4/ND3 plasma chemistries were employed. Both the Sc2O3Sc2O3 and MgO produced essentially complete recovery of the current in GaN-cap HEMT structures and ∼80-90% recovery in AlGaN-cap structures. The Sc2O3Sc2O3 had superior long-term stability, with no change in HEMT behavior over 5 months aging. © 2002 The Electrochemical Society. All rights reserved.This publication has 47 references indexed in Scilit:
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