Calculation of deep state profiles from transient capacitance data

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Abstract
Several analytical methods have been published for determining the spatial variation of deep level concentrations from depletion profiling measurements. These methods require the numerical differentiation of experimental data. In this letter we report results of a precise computer simulation of capacitance transient experiments which show the need to take account of the trap depth below the conduction band when calculating concentrations and the problems involved in numerically differentiating experimental data. We have extended the simulation program to yield a completely general iterative profiling scheme which does not employ numerical differentiation. This new method is compared with existing analytical techniques and is shown to possess significantly greater accuracy.