Yellow-emitting AlGaInP double heterostructure laser diode at 77 K grown by atmospheric metalorganic chemical vapor deposition
- 1 November 1984
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (9) , 964-966
- https://doi.org/10.1063/1.95459
Abstract
Yellow‐emitting pulsed laser operation of an Al0.37Ga0.15In0.48P/Al0.16Ga0.36In0.48P/ Al0.37Ga0.15In0.48P double heterostructure laser diode was obtained at 77 K. The emission wavelength was 579 nm. The threshold current density was 5.6 kA/cm2 for a diode with a Si3N4 insulated 8‐μm‐wide and 250‐μm‐long stripe geometry. The device was made from a DH wafer grown by conventional metalorganic chemical vapor deposition using triethyl metals and phosphine as source materials.Keywords
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