Displacement damage extremes in silicon depletion regions
- 1 December 1989
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 36 (6) , 1831-1839
- https://doi.org/10.1109/23.45376
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- High energy electron induced displacement damage in siliconIEEE Transactions on Nuclear Science, 1988
- Displacement damage in GaAs structuresIEEE Transactions on Nuclear Science, 1988
- Neutron Damage Equivalence for Silicon, Silicon Dioxide, and Gallium ArsenideIEEE Transactions on Nuclear Science, 1987
- Energy Dependence of Proton-Induced Displacement Damage in Gallium ArsenideIEEE Transactions on Nuclear Science, 1987
- Correlation of Particle-Induced Displacement Damage in SiliconIEEE Transactions on Nuclear Science, 1987
- Energy Dependence of Proton-Induced Displacement Damage in SiliconIEEE Transactions on Nuclear Science, 1986
- Proton-nucleus total inelastic cross sections - an empirical formula for E greater than 10 MeVThe Astrophysical Journal Supplement Series, 1983
- Nature of Bombardment Damage and Energy Levels in SemiconductorsJournal of Applied Physics, 1959
- Disordered Regions in Semiconductors Bombarded by Fast NeutronsJournal of Applied Physics, 1959
- The Effects of Neutron Irradiation on Germanium and SiliconProceedings of the IRE, 1958