A 900-MHz 29.5-dBm 0.13-μm CMOS HiVP Power Amplifier
- 26 August 2008
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 56 (9) , 2040-2045
- https://doi.org/10.1109/TMTT.2008.2001961
Abstract
Using ST 0.13-mum CMOS technology, a class A power amplifier has been developed for the global system for mobile communication in Europe. To solve the problem of low breakdown voltage in deep-submicrometer CMOS technology, the high-voltage/high-power (HiVP) device configuration is used. With the HiVP configuration, a large voltage can be divided by several devices so that the voltage drop on each device can be limited under the breakdown voltage. The measurement results show that the output power of 29.5 dBm has been achieved at the frequency of 900 MHz. The linear power gain reaches 11.5 dB and the maximum power-added efficiency is as high as 34.5%.Keywords
This publication has 7 references indexed in Scilit:
- RF POWER AMPLIFIERS FOR MOBILE COMMUNICATIONSPublished by Springer Nature ,2006
- Ultra-Broadband GaAs HIFET MMIC PAPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2006
- A 1.75-GHz polar modulated CMOS RF power amplifier for GSM-EDGEIEEE Journal of Solid-State Circuits, 2005
- 20dBm CMOS Class AB Power Amplifier Design for Low Cost 2GHz-2.45GHz Consumer Applications in a 0.13um TechnologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- The high voltage/high power FET (HiVP)Published by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- A 2.4-ghz 0.18-μm cmos self-biased cascode power amplifierIEEE Journal of Solid-State Circuits, 2003
- Fully integrated CMOS power amplifier design using the distributed active-transformer architectureIEEE Journal of Solid-State Circuits, 2002