Epitaxial regrowth of evaporated amorphous silicon by a pulsed laser beam
- 1 September 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 33 (5) , 431-433
- https://doi.org/10.1063/1.90385
Abstract
3000‐Å‐thick epitaxial layers of 〈100〉 and 〈111〉 silicon have been grown using a Q‐switched ruby laser. The initial amorphous silicon layers were formed by e‐gun evaporation of high‐purity silicon. Using Rutherford backscattering it was established that the crystal quality of the regrown 〈100〉 Si is much better than the 〈111〉 Si, similar to thermal annealing.Keywords
This publication has 4 references indexed in Scilit:
- Spatially controlled crystal regrowth of ion-implanted silicon by laser irradiationApplied Physics Letters, 1978
- Structure of crystallized layers by laser annealing of 〈100〉 and 〈111〉 self-implanted silicon samplesApplied Physics A, 1978
- Laser annealing of boron-implanted siliconApplied Physics Letters, 1978
- Investigation of laser induced diffusion and annealing processes of arsenic-implanted silicon crystalsPhysica Status Solidi (a), 1977