New Ti-SALICIDE process using Sb and Ge preamorphization for sub-0.2 μm CMOS technology
- 1 January 1998
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 45 (9) , 2002-2009
- https://doi.org/10.1109/16.711367
Abstract
No abstract availableKeywords
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