Abrikosov vortex memory

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Abstract
A nondestructive readout random access memory (RAM) cell based on the use of Abrikosov vortices in thin‐film type‐II superconductors is newly designed and experimentally tested. The cell occupies an area of 30×60 μm2 with a 5‐μm design rule. Proper memory cell operation is achieved in the so‐called 1, −1 mode using the shift saturation effect, which occurs on the shift value characteristics of the sense gate threshold curves as a function of the write currents. This is the first Abrikosov vortex RAM cell to operate properly. The write current level has been reduced one order of magnitude using a Pb/In/Au film co‐evaporated at 90 K for the vortex storage region.