The Si/Pd(Si,Ge) ohmic contact on n-GaAs
- 15 June 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (24) , 3016-3018
- https://doi.org/10.1063/1.106794
Abstract
A modified Si/Pd ohmic contact to n‐GaAs has been developed based on the solid‐phase regrowth mechanism. The Si/Pd contact usually yields a contact resistivity of 2×10−6 Ω cm2. A thin (∼15 Å) layer of additional Ge or Si embedded in the Pd layer of the Si/Pd contact structure is used to reduce the contact resistivity from ∼2×10−6 to 2–4×10−7 Ω cm 2 without suffering from a loss of thermal stability. The reduction in the contact resistivity is explained in terms of the formation of an n+ GaAs surface layer via solid‐phase regrowth. The modified contacts show uniform surface and interface morphologies. The contact resistivity of the modified contacts remains in the mid‐10−6 Ω cm2 range after annealing at 400 °C for 50 h.Keywords
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