Mechanisms of hot-carrier induced degradation of SOI (SIMOX) MOSFET's

This publication has 4 references indexed in Scilit:

• Aging analysis of nMOS of a 1.3- mu m partially depleted SIMOX SOI technology comparison with a 1.3- mu m bulk technology
  IEEE Transactions on Electron Devices, 1993
• Interface characterization of fully depleted SOI MOSFETs by the dynamic transconductance technique
  IEEE Electron Device Letters, 1991
• The generation and characterization of electron and hole traps created by hole injection during low gate voltage hot-carrier stressing of n-MOS transistors
  IEEE Transactions on Electron Devices, 1990
• Two-dimensional modeling of locally damaged short-channel MOSFET's operating in the linear region
  IEEE Transactions on Electron Devices, 1987