Aging analysis of nMOS of a 1.3- mu m partially depleted SIMOX SOI technology comparison with a 1.3- mu m bulk technology
- 1 January 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 40 (2) , 364-370
- https://doi.org/10.1109/16.182515
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Half-micron CMOS on ultra-thin silicon on insulatorPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- A half-micron CMOS technology using ultra-thin silicon on insulatorPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Low-field charge injection in SIMOX buried oxidesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Structure design for submicron MOSFET on ultra thin SOIPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Back-channel hot-electron effect on the front-channel characteristics in thin-film SOI MOSFETsIEEE Electron Device Letters, 1991
- Evaluation of pulsed radiation effects in buried oxides by fast C-V measurementsJournal of Applied Physics, 1991
- Hot-carrier-induced degradation of the back interface in short-channel silicon-on-insulator MOSFETSIEEE Electron Device Letters, 1991
- SOI design for competitive CMOS VLSIIEEE Transactions on Electron Devices, 1990
- Analysis of the drain breakdown mechanism in ultra-thin-film SOI MOSFETsIEEE Transactions on Electron Devices, 1990
- Hot-electron-induced MOSFET degradation—Model, monitor, and improvementIEEE Transactions on Electron Devices, 1985