Growth of semi-insulating GaAs crystals with low carbon concentration using pyrolytic boron nitride coated graphite

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Abstract
It has been determined that the incorporation of carbon into GaAs crystals grown by the liquid encapsulated Czochralski method occurs as the result of a reaction between the GaAs melt and gaseous oxides of carbon, rather than carbon particles. The incorporation occurs during growth as well as during synthesis. The incorporation of carbon was particularly large when a commercially available large puller was used because of the greater number of carbon components in the hot zone which act as sources. Crystals with a low carbon concentration of 1×1015 cm−3 have been successfully grown by employing pyrolytic boron nitride coated graphite components in the large puller.