Interaction of Cu with CoSi2 with and without TiNx barrier layers
- 24 September 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (13) , 1307-1309
- https://doi.org/10.1063/1.104230
Abstract
Thermally induced interactions of Cu with CoSi2, with and without interposed TiNx layers, have been studied using Rutherford backscattering spectrometry, Auger electron spectroscopy, and x‐ray diffraction. Cu diffuses through a preformed CoSi2 layer to form the structure Cu/CoSi2/Cu3Si/Si at temperatures above 300 °C, and no dissociation of CoSi2 occurs. A 50 nm TiNx(x≊1) layer is observed to be an effective diffusion barrier up to about 500 °C between Cu and CoSi2.Keywords
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