Temperature Dependence of Hole Velocity in p-GaAs
- 1 June 1971
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 42 (7) , 2864-2867
- https://doi.org/10.1063/1.1660641
Abstract
The temperature dependence of the saturation drift velocity of holes in p‐GaAs has been experimentally determined. The material used was grown epitaxially and had a low field mobility μ≈400 cm2/V sec and carrier concentrationp 0≈1×1016/cm3, both at T=300°K. The saturation velocity was 1.0×107 cm/sec at T=300°K, and decreased to 7×106 cm/sec at T=469°K. The temperature dependence of the low‐field mobility was also measured and was found to be in good agreement with the recent theory of Wiley and DiDomenico.This publication has 14 references indexed in Scilit:
- Lattice Mobility of Holes in III-V CompoundsPhysical Review B, 1970
- HOLE VELOCITY IN p-GaAsApplied Physics Letters, 1970
- Activation Energy of Holes in Zn-Doped GaAsJournal of Applied Physics, 1970
- HIGH-POWER AND HIGH-EFFICIENCY GaAs AVALANCHE DIODESApplied Physics Letters, 1969
- Theory of Avalanche Breakdown in InSb and InAsPhysical Review B, 1968
- The Preparation and Properties of Vapor-Deposited Epitaxial GaAs[sub 1−x]P[sub x] Using Arsine and PhosphineJournal of the Electrochemical Society, 1966
- Experimental Determination of the Energy Distribution Functions and Analysis of the Energy-Loss Mechanisms of Hot Carriers in-Type GermaniumPhysical Review B, 1964
- Metal—Semiconductor Barrier Height Measurement by the Differential Capacitance Method—One Carrier SystemJournal of Applied Physics, 1963
- Recombination of Electrons and Donors in-Type GermaniumPhysical Review B, 1961
- Drift Velocity Saturation in p-Type GermaniumJournal of Applied Physics, 1959