On the Nature of Metal–Semiconductor Phase Transition in Vanadium Dioxide
- 1 June 2000
- journal article
- Published by Pleiades Publishing Ltd in Physics of the Solid State
- Vol. 42 (6) , 1126-1133
- https://doi.org/10.1134/1.1131328
Abstract
The method of coercive temperature distribution function is used to prove that the metal-semiconductor temperature-induced phase transition in vanadium dioxide manifests itself as a Mott electronic transition.Keywords
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