Alteration in electrical and infrared switching properties of vanadium oxides due to proton irradiation
- 1 December 1990
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 37 (6) , 1739-1743
- https://doi.org/10.1109/23.101185
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- The two components of the crystallographic transition in VO2Published by Elsevier ,2003
- Summary Abstract: The barrier to oxygen penetration on transition‐metal oxide surfacesJournal of Vacuum Science & Technology A, 1988
- Simple resistance model fit to the oxidation of a vanadium film into VO2Journal of Vacuum Science & Technology A, 1988
- A model for electronic structure of VO2Philosophical Magazine Part B, 1985
- Modifications in the phase transition properties of predeposited VO2 filmsJournal of Vacuum Science & Technology A, 1984
- Measurement of local stress in laser-recrystallized lateral epitaxial silicon films over silicon dioxide using Raman scatteringApplied Physics Letters, 1983
- Doping of VO2 thin films by ion implantationPhysica Status Solidi (a), 1977
- Optical Properties of Vbetween 0.25 and 5 eVPhysical Review B, 1968
- Oxides Which Show a Metal-to-Insulator Transition at the Neel TemperaturePhysical Review Letters, 1959