Measurement of local stress in laser-recrystallized lateral epitaxial silicon films over silicon dioxide using Raman scattering
- 15 July 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (2) , 177-179
- https://doi.org/10.1063/1.94271
Abstract
Raman microprobe measurements of stress have been performed on a laser-recrystallized, seeded, lateral epitaxial silicon film on an oxidized silicon wafer. The direction-averaged, planar tensile stress increased from 2×109 dyn/cm2 in the seed region to 5×109 dyn/cm2 in the silicon-on-insulator region at distances greater than 20 μm from the seed/silicon-on-insulator boundary. Grain-boundary nucleation observed by optical Nomarski microscopy occurred approximately 11 μm from the seed edge in this film. Depth variations of the stress were observed by comparing measurements using 457-nm and 514.5-nm excitation wavelengths.Keywords
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