Local lattice strain measurements in semiconductor devices by using convergent-beam electron diffraction
- 1 March 2000
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 210 (1-3) , 341-345
- https://doi.org/10.1016/s0022-0248(99)00707-1
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Strains in crystals with amorphous surface films studied by convergent beam electron diffraction and high-resolution imagingUltramicroscopy, 1994
- Process-induced mechanical stress in isolation structures studied by micro-Raman spectroscopyJournal of Applied Physics, 1993
- Measurement of Strain in Locally Oxidized Silicon using Convergent-Beam Electron DiffractionJapanese Journal of Applied Physics, 1993
- On the assessment of local stress distributions in integrated circuitsApplied Surface Science, 1993
- Automated lattice parameter measurement from HOLZ lines and their use for the measurement of oxygen content in YBa2Cu3O7-δ from nanometer-sized regionUltramicroscopy, 1992
- Published by AIP Publishing ,1991
- Film-edge-induced dislocation generation in silicon substrates. II. Application of the theoretical model for local oxidation processes on (001) silicon substratesJournal of Applied Physics, 1987
- Viscous flow of thermal SiO2Applied Physics Letters, 1977
- The determination of foil thickness by scanning transmission electron microscopyPhysica Status Solidi (a), 1975
- X-ray diffraction topographs of silicon crystals with superposed oxide film. III. Intensity distributionJournal of Applied Physics, 1973