Reflectivity, joint density of states and band structure of group IVb transition-metal dichalcogenides
- 20 June 1985
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 18 (17) , 3327-3335
- https://doi.org/10.1088/0022-3719/18/17/010
Abstract
Optical joint density of states (OJDOS) functions have been obtained from Kramers-Kronig analysis of reflectivity measurements for the layered-type materials TiS2, TiSe2, ZrS2, ZrSe2, HfS2 and HfSe2. The reflectivity measurements were made at near-normal incidence over the photon energy range 0.6-14 eV at 77K. Comparison of the OJDOS functions shows that there are many similarities in the band shapes which can be explained in terms of the amount of trigonal distortion present in the crystal lattice and the differences in binding energy of electron levels in the atoms.Keywords
This publication has 8 references indexed in Scilit:
- Reflectivity and band structure of 1T-VSe2Journal of Physics C: Solid State Physics, 1984
- Optical response of uniaxial semiconductors. II. Optical and electron-energy-loss spectra of ZrS2and ZrSe2Physical Review B, 1982
- Symmetry dependence of optical transitions in group 4B transition metal dichalcogenidesJournal of Physics C: Solid State Physics, 1982
- A study of the optical joint density-of-states functionJournal of Physics C: Solid State Physics, 1976
- The growth by iodine vapour transport techniques and the crystal structures of layer compounds in the series TiSxSe2−x, TiSxTe2−x, TiSexTe2−xJournal of Crystal Growth, 1974
- Band Structures of Transition-Metal-Dichalcogenide Layer CompoundsPhysical Review B, 1973
- The transition metal dichalcogenides discussion and interpretation of the observed optical, electrical and structural propertiesAdvances in Physics, 1969
- Reevaluation of X-Ray Atomic Energy LevelsReviews of Modern Physics, 1967