Deposition of SiC films by pulsed excimer laser ablation
- 8 October 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (15) , 1540-1542
- https://doi.org/10.1063/1.103346
Abstract
Thin films of β-SiC were grown on Si substrates by excimer laser pulse ablation of bulk SiC. The films were examined by Auger electron, x-ray, and photoelectron spectroscopies and laser ionization mass analysis techniques. The film was smooth as monitored by scanning electron microscopy. Scanning electron and scanning tunneling microscopy (STM) showed inclusions in the deposited SiC films, and laser ionization mass analysis detected SiC dimers in the vapor plume emitted from the target.Keywords
This publication has 9 references indexed in Scilit:
- Laser-pulse-vaporization of refractory materialsPublished by Walter de Gruyter GmbH ,1990
- Laser wavelength dependent properties of YBa2Cu3O7−δ thin films deposited by laser ablationApplied Physics Letters, 1989
- Y-Ba-Cu-O superconducting films produced by long-pulse laser vaporizationApplied Physics Letters, 1989
- Laser-pulse vaporization of uranium dioxide and other refractory materialsJournal of Applied Physics, 1988
- Observation of two distinct components during pulsed laser deposition of high T c superconducting filmsApplied Physics Letters, 1988
- Epitaxial Growth and Characterization of β ‐ SiC Thin FilmsJournal of the Electrochemical Society, 1985
- Surface studies of epitaxial β-SiC on Si(100)Journal of Applied Physics, 1984
- ‘‘Buffer-layer’’ technique for the growth of single crystal SiC on SiApplied Physics Letters, 1984
- Production of large-area single-crystal wafers of cubic SiC for semiconductor devicesApplied Physics Letters, 1983