Magneto-optical investigation of the neutral donor bound exciton in GaN
- 31 October 1995
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 96 (2) , 53-56
- https://doi.org/10.1016/0038-1098(95)00495-5
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Electron-spin-resonance studies of donors in wurtzite GaNPhysical Review B, 1993
- Observation of optically detected magnetic resonance in GaN filmsApplied Physics Letters, 1993
- High-power InGaN/GaN double-heterostructure violet light emitting diodesApplied Physics Letters, 1993
- GaN, AlN, and InN: A reviewJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- ODMR study of recombination processes in ionic crystals and silicon carbideApplied Magnetic Resonance, 1991
- Growth of single crystal GaN substrate using hydride vapor phase epitaxyJournal of Crystal Growth, 1990
- P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)Japanese Journal of Applied Physics, 1989
- Luminescence in epitaxial GaN : CdJournal of Applied Physics, 1974
- Absorption, Reflectance, and Luminescence of GaN Epitaxial LayersPhysical Review B, 1971
- Optical Properties of Bound Exciton Complexes in Cadmium SulfidePhysical Review B, 1962