EPR observation of a platinum pair complex in Si
- 15 September 1988
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 38 (9) , 6308-6311
- https://doi.org/10.1103/physrevb.38.6308
Abstract
We report the observation of a (Pt-Pt) pair in Si. The defect is paramagnetic, with a g tensor of symmetry and principal values of g[110]=2.1869, g[1¯10]=1.5181, and g[001]=1.6317. The central hyperfine spectra show interaction with two equivalent Pt ions. This defect gives rise to an electrically active level at +0.5 eV.
Keywords
This publication has 13 references indexed in Scilit:
- Photoelectron paramagnetic resonance ofin siliconPhysical Review B, 1987
- Influence of hydrostatic pressure on the platinum levels in siliconPhysical Review B, 1986
- Watson-sphere-terminated model applied to theandsubstitutional impurities in siliconPhysical Review B, 1984
- Electron paramagnetic resonance ofin silicon: Isolated substitutional Pt versus Pt-Pt pairsPhysical Review B, 1984
- Evidence that the gold donor and acceptor in silicon are two levels of the same defectApplied Physics Letters, 1983
- Strain-modulated ESR study ofin siliconPhysical Review B, 1983
- Deep levels in semiconductorsPhysica B+C, 1983
- Energy Levels in SiliconAnnual Review of Materials Science, 1980
- Photoionization cross sections in platinum-doped siliconJournal of Applied Physics, 1977
- Spin Resonance of Pd and Pt in SiliconPhysical Review B, 1962