HBTs in telecommunications
- 1 October 1997
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 41 (10) , 1397-1405
- https://doi.org/10.1016/s0038-1101(97)00082-8
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- AlInAs/GaInAs/InP double heterojunction bipolar transistor with a novel base-collector design for power applicationsIEEE Electron Device Letters, 1996
- FUNDAMENTALS, PERFORMANCE AND RELIABILITY OF III-V COMPOUND SEMICONDUCTOR HETEROJUNCTION BIPOLAR TRANSISTORSInternational Journal of High Speed Electronics and Systems, 1995
- GaAs HBT RELIABILITYInternational Journal of High Speed Electronics and Systems, 1994
- 10 Gbit/s, 1.56 μm multiquantum well InP/InGaAsP Mach–Zehnder optical modulatorElectronics Letters, 1993
- AlInAs/GaInAs HBT IC technologyIEEE Journal of Solid-State Circuits, 1991