Optimization of 10-20 GHz avalanche photodiodes
- 1 November 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 8 (11) , 1528-1530
- https://doi.org/10.1109/68.541572
Abstract
Calculations are presented on the optimization of the high-frequency response of superlattice and bulk avalanche photodiodes (APD's). The thickness of the avalanche and absorption regions, as well as the electric fields in these layers are optimized, as is the hetero-interface field. We find that high-performance APD's operating up to 20 GHz are feasible.Keywords
This publication has 13 references indexed in Scilit:
- InAlGaAs impact ionization rates in bulk, superlattice, and sawtooth band structuresApplied Physics Letters, 1994
- Flip-chip lnAlAs/lnGaAs superlattice avalanche photodiodes with back-illuminated structuresMicrowave and Optical Technology Letters, 1994
- High-frequency performance of separate absorption grading, charge, and multiplication InP/InGaAs avalanche photodiodesIEEE Photonics Technology Letters, 1993
- High-speed and low-dark-current flip-chip InAlAs/InAlGaAs quaternary well superlattice APDs with 120 GHz gain-bandwidth productIEEE Photonics Technology Letters, 1993
- A wide-bandwidth low-noise InGaAsP-InAlAs superlattice avalanche photodiode with a flip-chip structure for wavelengths of 1.3 and 1.55 mu mIEEE Journal of Quantum Electronics, 1993
- InGaAsP/InAlAs superlattice avalanche photodiodeIEEE Journal of Quantum Electronics, 1992
- Resonant cavity-enhanced (RCE) photodetectorsIEEE Journal of Quantum Electronics, 1991
- Frequency response theory for multilayer photodiodesJournal of Lightwave Technology, 1990
- Impact ionization coefficients of electrons and holes inIEEE Journal of Quantum Electronics, 1985
- In0.53Ga0.47As photodiodes with dark current limited by generation-recombination and tunnelingApplied Physics Letters, 1980