Semiclassical interband tunnelling probability in semiconductor heterostructures
- 1 January 1994
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 9 (1) , 41-48
- https://doi.org/10.1088/0268-1242/9/1/008
Abstract
A new semiclassical method to calculate the characteristics of interband tunnelling devices is proposed. This method generalizes the approach developed earlier for the case of interfaces non-perpendicular to the particle wavevector. It allows one to obtain analytical expressions for the tunnelling probability T in semiconductor structures with abrupt heterojunctions. The characteristics of InAs/AlGaSb/InAs, InAs/AlGaSb/GaSb diodes are calculated using the developed method. All results are compared with those from the classical WKB approach and the transfer matrix method to determine the tunnelling probability.Keywords
This publication has 12 references indexed in Scilit:
- Negative differential resistance of single barrier interband tunnelling diodesSolid-State Electronics, 1993
- Semiclassical theory of interband tunnelling in semiconductor heterostructuresSemiconductor Science and Technology, 1993
- Study of peak and valley currents in double quantum well resonant interband tunnel diodesSemiconductor Science and Technology, 1992
- Tunnelling processes in broken-gap heterostructuresSemiconductor Science and Technology, 1992
- Oscillations up to 712 GHz in InAs/AlSb resonant-tunneling diodesApplied Physics Letters, 1991
- Resonant interband tunneling in InAs/GaSb/AlSb/InAs and GaSb/InAs/AlSb/GaSb heterostructuresApplied Physics Letters, 1990
- Double quantum well resonant tunnel diodesApplied Physics Letters, 1990
- Interband tunneling in polytype GaSb/AlSb/InAs heterostructuresApplied Physics Letters, 1989
- Demonstration of large peak-to-valley current ratios in InAs/AlGaSb/InAs single-barrier heterostructuresApplied Physics Letters, 1989
- New negative differential resistance device based on resonant interband tunnelingApplied Physics Letters, 1989