Tunnelling processes in broken-gap heterostructures
- 1 July 1992
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 7 (7) , 980-984
- https://doi.org/10.1088/0268-1242/7/7/017
Abstract
A theoretical study of the tunnelling processes in broken-gap heterostructures is described. The analytical expressions for tunnelling probabilities T were obtained using the two-band approximation of the effective-mass method for single- and double-barrier structures made from InAs, AlxGa1-xSb and GaSb. It is shown that the effects of transformation of quasiparticles determine the properties of such heterostructures.Keywords
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