Improved design of AlAs/GaAs resonant tunneling diodes
- 23 April 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (17) , 1676-1678
- https://doi.org/10.1063/1.103114
Abstract
We have investigated the effect of complex barrier structures in double-barrier resonant tunneling diodes (DBRTDs). The largest room-temperature peak-to-valley current ratios (PVCRs) to date have been observed for AlGaAs/GaAs DBRTDs. PVCRs as high as 5.1 were observed in AlAs/GaAs DBRTDs with an Al0.14Ga0.86As chair barrier in the cathode. We attribute the improvement in the PVCRs to the chair barrier in the cathode which significantly reduces the valley current.Keywords
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