Elevated Pressure Study of the Effect of Different Donors on Electron Transfer in n-GaAs
- 1 August 1969
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 40 (9) , 3554-3555
- https://doi.org/10.1063/1.1658237
Abstract
The elevated-pressure resistance behavior of differently doped samples suggests that the ratio of mobility in the [000] conduction band to that in the [100] band is constant and independent of initial mobility. A mobility ratio of 39 is indicated at atmospheric pressure. Carrier freeze-out with respect to the [100] band was observed for S- and Si-doped samples but not with Se and Te.This publication has 8 references indexed in Scilit:
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