Low field mobility of ultra-thin SOI N- and P-MOSFETs: Measurements and implications on the performance of ultra-short MOSFETs
- 1 January 2000
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 671-674
- https://doi.org/10.1109/iedm.2000.904408
Abstract
Electron and hole effective mobilities of ultra-thin SOI N- and P-MOSFETs have been measured at different temperatures using a special test structure able to circumvent parasitic resistance effects. At large inversion densities (N/sub inv/) ultra-thin SOI mobility can be higher than in heavily doped bulk MOS due a lower effective field and it is largely insensitive to silicon thickness (T/sub SI/). However, at small Ni/sub inv/ the mobility is clearly reduced for decreasing T/sub SI/. The effective mobility data are used to study the implications for ultra-short MOS transistor performance at device simulation level.Keywords
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