Diode quality factor in polycrystalline solar cells
- 15 August 1984
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 56 (4) , 1240-1241
- https://doi.org/10.1063/1.334059
Abstract
The increase in diode quality factor with decreasing grain size in polycrystalline conductor (metal or degenerate semiconductor)-insulator-semiconductor (MIS) solar cells is explained as due to (1) an increase in insulator-semiconductor interface charge due to the presence of grain boundaries on the I-S surface, and (2) the voltage drop at the grain boundaries in the polycrystalline base semiconductor.This publication has 10 references indexed in Scilit:
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