Inelastic electron tunneling spectroscopy: Capabilities and limitations in metal–oxide–semiconductor devices
- 17 April 2002
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 91 (9) , 5896-5901
- https://doi.org/10.1063/1.1462423
Abstract
We report on inelastic electron tunneling spectroscopy of a tunneling metal–oxide–semiconductor (MOS) device over an extended energy range compared to previous results. We have clearly observed the vibrations of the hydrogen-passivated (111)Si center in this extended energy range. The assignment of this mode has been confirmed by a comparison with infrared experiments. Capabilities and limitations of the technique to detect and observe molecular vibrations in tunneling MOS devices are discussed.
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