Piezoresistance effect of silicon
- 1 July 1991
- journal article
- Published by Elsevier in Sensors and Actuators A: Physical
- Vol. 28 (2) , 83-91
- https://doi.org/10.1016/0924-4247(91)85017-i
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Origin of the shear piezoresistance coefficientofn-type siliconPhysical Review B, 1991
- Second-Order Piezoresistance Coefficients of p-Type SiliconJapanese Journal of Applied Physics, 1990
- Second-Order Piezoresistance Coefficients of n-Type SiliconJapanese Journal of Applied Physics, 1989
- Graphical Representation of the Piezoresistance Coefficients in Silicon-Shear Coefficients in PlaneJapanese Journal of Applied Physics, 1987
- Nonlinear Effects in the Piezoresistivity of p‐Type SiliconPhysica Status Solidi (b), 1986
- Effect of Stress on Germanium and Silicon p-n JunctionsJapanese Journal of Applied Physics, 1967
- Cyclotron Resonance in Uniaxially Stressed Silicon. II. Nature of the Covalent BondPhysical Review B, 1965
- Young's Modulus, Shear Modulus, and Poisson's Ratio in Silicon and GermaniumJournal of Applied Physics, 1965
- Theory of Cyclotron Resonance in Strained Silicon CrystalsPhysical Review B, 1963
- Semiconducting Stress Transducers Utilizing the Transverse and Shear Piezoresistance EffectsJournal of Applied Physics, 1961