High-resolution x-ray diffraction from self-organized PbSe/PbEuTe quantum dot superlattices
- 3 May 2001
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 34 (10A) , A1-A5
- https://doi.org/10.1088/0022-3727/34/10a/301
Abstract
High-resolution x-ray diffraction and grazing-incidence small-angle x-ray scattering are used for the investigation of the morphology of free-standing and buried self-assembled PbSe quantum dots in PbSe/PbEuTe superlattices. The measured data are simulated by means of kinematical and semikinematical scattering theories, and linear elasticity theory. The differences in the parameters of free-standing and buried dots yield a direct evidence of structure changes of self-assembled dots during their overgrowth.Keywords
This publication has 21 references indexed in Scilit:
- Multiple layers of self-asssembled Ge/Si islands: Photoluminescence, strain fields, material interdiffusion, and island formationPhysical Review B, 2000
- Strain and composition in SiGe nanoscale islands studied by x-ray scatteringPhysical Review B, 2000
- Ge–Si intermixing in Ge quantum dots on Si(001) and Si(111)Applied Physics Letters, 2000
- Nonuniform Composition Profile inAlloy Quantum DotsPhysical Review Letters, 2000
- Interdiffusion and surface segregation in stacked self-assembled InAs/GaAs quantum dotsApplied Physics Letters, 1999
- High resolution electron microscope analysis of lattice distortions and In segregation in highly strained In0.35Ga0.65As coherent islands grown on GaAs (001)Journal of Applied Physics, 1999
- Strain-Driven Alloying in Ge/Si(100) Coherent IslandsPhysical Review Letters, 1999
- Direct measurement of strain in a Ge island on Si(001)Applied Physics Letters, 1999
- Ordering of self-assembledislands studied by grazing incidence small-angle x-ray scattering and atomic force microscopyPhysical Review B, 1998
- Direct investigation of subsurface interface electronic structure by ballistic-electron-emission microscopyPhysical Review Letters, 1988