1.3 µm, 50 Gbit/s electroabsorption modulators integrated with DFB laser for beyond 100G parallel LAN applications

9 June 2011

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 47 (12) , 708-710
https://doi.org/10.1049/el.2011.1126

Abstract

A 1.3 µm, 50 Gbit/s electroabsorption modulator integrated with a DFB laser for future parallel LAN, the total data rate of which is over 100 Gbit/s, is developed. Very clear eye openings after 40 km transmission under 50 Gbit/s operation on singlemode fibre are demonstrated for eight wavelengths with discrete packages for the first time.

Keywords

This publication has 3 references indexed in Scilit:

1.3-$\mu$m 4$\,\times\,$25-Gb/s Monolithically Integrated Light Source for Metro Area 100-Gb/s Ethernet
IEEE Photonics Technology Letters, 2011
25 Gbit/s 1.3 µm InGaAlAs-based electroabsorption modulator integrated with DFB laser for metro-area (40 km) 100 Gbit/s Ethernet system
Electronics Letters, 2009
High-Power 25-Gb/s Electroabsorption Modulator Integrated With a Laser Diode
IEEE Photonics Technology Letters, 2009