Analysis of capacitance measurements on silicon microstrip detectors
- 1 August 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 41 (4) , 785-790
- https://doi.org/10.1109/23.322807
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Measurement of interstrip and coupling capacitances of silicon microstrip detectorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- A low power bipolar amplifier integrated circuit for the ZEUS silicon strip systemNuclear Physics B - Proceedings Supplements, 1993
- Type inversion in silicon detectorsNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1992
- Electrostatic simulations for the design of silicon strip detectors and front-end electronicsNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1991
- Study of radiation effects on AC-coupled silicon strip detectorsNuclear Physics B - Proceedings Supplements, 1991
- Measurement of proton induced radiation damage to CMOS transistors and p-i-n diodesIEEE Transactions on Nuclear Science, 1990
- The time slice systemNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1990
- Punch-through currents and floating strip potentials in silicon detectorsIEEE Transactions on Nuclear Science, 1989