Inverse and direct photoemission experiments (UV range) of the Si/Ni interfaces
- 1 March 1986
- journal article
- Published by Elsevier in Surface Science
- Vol. 168 (1-3) , 234-239
- https://doi.org/10.1016/0039-6028(86)90854-x
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
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- Energy dependence of the optical matrix element in hydrogenated amorphous and crystalline siliconPhysical Review B, 1985
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- XPS Investigation of Ni/Si(111) InterfacesPhysica Scripta, 1983
- -resolved inverse photoelectron spectroscopy and its application to Cu(001), Ni(001), and Ni(110)Physical Review B, 1982
- Electronic structure of nickel silicidesSi, NiSi, and NiPhysical Review B, 1982
- Chemical bonding at the Si–metal interface: Si–Ni and Si–CrJournal of Vacuum Science and Technology, 1982
- Directional UV photoemission from clean and sulphur saturated (100), (110) and (111) nickel surfacesSurface Science, 1977