New method for empirically determining surface electronic species from multiple-bias STM images: a multivariate classification approach
- 20 December 1994
- journal article
- Published by Elsevier in Surface Science
- Vol. 321 (3) , 276-286
- https://doi.org/10.1016/0039-6028(94)90193-7
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Scanning tunneling microscopy studies of Si donors () in GaAsPhysical Review Letters, 1994
- Adsorption and dissociation of disilane on Si(001) studied by STMSurface Science, 1993
- Observation of bulk defects by scanning tunneling microscopy and spectroscopy: Arsenic antisite defects in GaAsPhysical Review Letters, 1993
- Gallium-induced perturbations of the Ge(111)-c(2×8) reconstructionPhysical Review B, 1993
- Defects of Ge(111)c(2 × 8) — structural and electronic characterizationSurface Science, 1993
- Site-specific hydrogen reactivity and reverse charge transfer on Ge(111)-c(2×8)Physical Review Letters, 1991
- Dimer–adatom–stacking-fault (DAS) and non-DAS (111) semiconductor surfaces: A comparison of Ge(111)-c(2×8) to Si(111)-(2×2), -(5×5), -(7×7), and -(9×9) with scanning tunneling microscopyPhysical Review B, 1989
- Atom-selective imaging of the GaAs(110) surfacePhysical Review Letters, 1987