Site-specific hydrogen reactivity and reverse charge transfer on Ge(111)-c(2×8)
- 30 December 1991
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 67 (27) , 3800-3803
- https://doi.org/10.1103/physrevlett.67.3800
Abstract
Scanning tunneling microscopy (STM) and first-principleds pseudopotential calculations are used to show that the equilibrium binding site for hydrogen on Ge(111)-c(2×8) is the rest-atom site. Our calculations show the hydrogen-rest-atom configuration is 0.7 eV lower in energy than the hydrogen-adatom configuration. Reaction at the rest-atom site causes very local rest-atom to adatom reverse charge transfer, and this site-specific chemistry is imaged directly using STM measurements in combination with these calculations.Keywords
This publication has 15 references indexed in Scilit:
- The importance of structure and bonding in semiconductor surface chemistry: hydrogen on the Si(111)-7 × 7 surfaceSurface Science, 1991
- Nature of the hydride species on the hydrogenated silicon (111)-(7 .times. 7) surfaceThe Journal of Physical Chemistry, 1991
- Two reaction channels directly observed for atomic hydrogen on the Si(111)-7×7 surfacePhysical Review B, 1991
- The adsorption of hydrogen, digermane, and disilane on Ge(111): a multiple internal reflection infrared spectroscopy studyJournal of Electron Spectroscopy and Related Phenomena, 1990
- Atom-resolved surface chemistry studied by scanning tunneling microscopy and spectroscopyPhysical Review B, 1989
- Electronic-structure calculation for metals by local optimizationPhysical Review B, 1989
- Silicon-germanium alloys and heterostructures: Optical and electronic propertiesCritical Reviews in Solid State and Materials Sciences, 1989
- Atom-resolved surface chemistry using scanning tunneling microscopyPhysical Review Letters, 1988
- Hydrogen in crystalline semiconductorsApplied Physics A, 1987
- Origin of surface states on Si(111)(7×7)Physical Review Letters, 1986