Surface charge and annealing in the Si/SiO2system †
- 1 December 1971
- journal article
- research article
- Published by Taylor & Francis in International Journal of Electronics
- Vol. 31 (6) , 629-635
- https://doi.org/10.1080/00207217108938260
Abstract
An examination of the surface charge density resulting from oxygen and nitrogen annealing in the temperature range 700-1200°c has been made. The nitrogen annealing process was found to be irreversible, since at any temperature the nitrogen annealing resulted in either no change or a decrease in the surface charge, but not an increase.Keywords
This publication has 3 references indexed in Scilit:
- The effect of ambient, temperature and cooling rate, on the surface charge at the silicon/ silicon dioxide interface†International Journal of Electronics, 1968
- Si-SiO[sub 2] Fast Interface State MeasurementsJournal of the Electrochemical Society, 1968
- Characteristics of the Surface-State Charge (Qss) of Thermally Oxidized SiliconJournal of the Electrochemical Society, 1967