The effect of ambient, temperature and cooling rate, on the surface charge at the silicon/ silicon dioxide interface†
- 1 January 1968
- journal article
- research article
- Published by Taylor & Francis in International Journal of Electronics
- Vol. 24 (1) , 11-16
- https://doi.org/10.1080/00207216808937997
Abstract
The influence of ambient, temperature and cooling rate, in determining the surface charge at the silicon/ silicon dioxide interface has been experimentally investigated. The results, in conjunction with previous work, have enabled some of the characteristics of the surface charge to be established.Keywords
This publication has 4 references indexed in Scilit:
- Stability and surface charge in the MOS system†International Journal of Electronics, 1968
- Characteristics of the Surface-State Charge (Qss) of Thermally Oxidized SiliconJournal of the Electrochemical Society, 1967
- Oxidation of Silicon at High Temperatures and Low Pressure under Flow Conditions and the Vapor Pressure of SiliconJournal of the Electrochemical Society, 1966
- Orientation dependence of built-in surface charge on thermally oxidized SiliconProceedings of the IEEE, 1965