First-principle theoretical study on the electronic properties of SiO2 models with hydrogenated impurities and charges
- 1 June 2003
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 216 (1-4) , 463-470
- https://doi.org/10.1016/s0169-4332(03)00407-0
Abstract
No abstract availableFunding Information
- Ministry of Education, Culture, Sports, Science and Technology
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