Elimination of the kink effect in GaAs metal semiconductor field-effect transistors by utilizing a low-temperature-grown buffer layer
- 24 August 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (8) , 928-930
- https://doi.org/10.1063/1.107731
Abstract
GaAs metal semiconductor field-effect-transistors (MESFETs) utilizing a nondoped GaAs buffer layer grown by molecular beam epitaxy at 300 °C do not show the kink effect which is observed in GaAs MESFETs utilizing a nondoped GaAs buffer layer grown at 600 °C. However, in both types of FETs, almost the same photoemissions caused by drain avalanche multiplication, are observed between the gate and the drain. A deep level transient spectroscopy (DLTS) spectrum shows that the low-temperature buffer (LTB) layer contains a deep level similar to the EL-2 level with high density. The kink effect may be eliminated because the deep level works as a large recombination center for holes generated by drain avalanche multiplication.Keywords
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