The effect of interface and alloy quality on the DC and RF performance of Ga/sub 0.47/In/sub 0.53/As-Al/sub 0.48/In/sub 0.52/As HEMTs
- 1 April 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 36 (4) , 641-645
- https://doi.org/10.1109/16.22468
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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