Verification of the charge-control model for GaAlAs/GaAs heterojunction bipolar transistors
- 26 September 1986
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 29 (9) , 919-923
- https://doi.org/10.1016/0038-1101(86)90014-6
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Electrical behavior of double heterojunction NpNGaAlAs/GaAs/GaAlAs bipolr transistorsSolid-State Electronics, 1985
- Heterostructure bipolar transistors and integrated circuitsProceedings of the IEEE, 1982
- Electrical behavior of an NPN GaAlAs/GaAs heterojunction transistorSolid-State Electronics, 1979
- Interface studies of AlxGa1−xAs-GaAs heterojunctionsJournal of Applied Physics, 1979
- A computer analysis of heterojunction and graded composition solar cellsIEEE Transactions on Electron Devices, 1977
- Transport of photocarriers in CdxHg1−xTe graded-gap structuresSolid-State Electronics, 1968
- Experiments on Ge-GaAs heterojunctionsSolid-State Electronics, 1962