Near-band-edge photoluminescence of wurtzite-type AlN
- 30 September 2002
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 81 (15) , 2755-2757
- https://doi.org/10.1063/1.1510586
Abstract
Temperature-dependent photoluminescence (PL) measurements were performed for A-plane and C-plane bulk AlN single crystals and epitaxial layers on sapphire. A strong near-band-edge (NBE) emission and deep-level luminescence were observed. At low excitations, the emission spectra are dominated by free and bound excitonic transitions and their LO-phonon replicas. At high excitations, the broadening and redshift of the NBE band is attributed to dense electron–hole plasma formation. The PL spectra differences of bulk single crystals and epilayers is explained by the electron–hole plasma expansion peculiarities.Keywords
This publication has 11 references indexed in Scilit:
- AlGaInN-based ultraviolet light-emitting diodes grown on Si(111)Applied Physics Letters, 2002
- Ultraviolet light-emitting diodes at 340 nm using quaternary AlInGaN multiple quantum wellsApplied Physics Letters, 2001
- Band parameters for III–V compound semiconductors and their alloysJournal of Applied Physics, 2001
- III–nitrides: Growth, characterization, and propertiesJournal of Applied Physics, 2000
- GaN: Processing, defects, and devicesJournal of Applied Physics, 1999
- Near band-edge transition in aluminum nitride thin films grown by metal organic chemical vapor depositionApplied Physics Letters, 1998
- Activation energies of Si donors in GaNApplied Physics Letters, 1996
- InGaN-Based Multi-Quantum-Well-Structure Laser DiodesJapanese Journal of Applied Physics, 1996
- Electron mobilities in gallium, indium, and aluminum nitridesJournal of Applied Physics, 1994
- Electron-Hole Liquids in SemiconductorsPhysical Review B, 1973