A fast algorithm for the calculation of junction capacitance and its application for impurity profile determination

This publication has 14 references indexed in Scilit:

• Transition region capacitance of diffused p-n junctions
  IEEE Transactions on Electron Devices, 1971
• On the calculation of doping profiles from C(V) measurements on two-sided junctions
  IEEE Transactions on Electron Devices, 1970
• Measurement of the ionization rates in diffused silicon p-n junctions
  Solid-State Electronics, 1970
• Computer-aided design of a Si avalanche photodiode
  IEEE Transactions on Electron Devices, 1969
• Depletion layer calculations for error function diffused junctions
  Solid-State Electronics, 1969
• Numerical calculations of the capacitance of linearly graded Si p-n junctions
  Electronics Letters, 1969
• Depletion layer and capacitance calculations for Gaussian diffused junctions
  Solid-State Electronics, 1969
• Determination of a physical model for double diffused transistors
  Solid-State Electronics, 1968
• A self-consistent iterative scheme for one-dimensional steady state transistor calculations
  IEEE Transactions on Electron Devices, 1964
• Diffused Junction Depletion Layer Calculations
  Bell System Technical Journal, 1960